The Influence of Oxygen‐Related Defects on the Formation of In₂O₃‐Based Low‐Fluorescence Transparent Conducting Film

When the fluorescence of a material under transparent conductive films is measured, it sometimes required that have low intensity to prevent stray light. In this study, oxygen partial pressure during sputtering was varied and transmittance, resistivity, were measured clarify cause indium tin oxide (ITO) In2O3. The both ITO In2O3 decreased with an increase in case as-deposited films. considered be vacancies. can maintain resistivity even small amount vacancies since contains SnO2, which generates carriers. High-temperature annealing also introduced other defects, increased intensity. This article protected by copyright. All rights reserved.